Modularly Integrated MEMS Technology
نویسندگان
چکیده
Process design, development and integration to fabricate reliable MEMS devices on top of VLSI-CMOS electronics without damaging the underlying circuitry have been investigated throughout this dissertation. Experimental and theoretical results that utilize two " Post-CMOS " integration approaches will be presented. The first integration approach uses SiGe MEMS technology for the " Post-CMOS " monolithic integration of the MEMS devices with electronics. Interconnects between SiGe MEMS and Al-TiN metallized layers have been characterized and optimized. A thorough study on Boron doping and Ge content effects on the electrical, mechanical, and chemical properties of SiGe MEMS technology has been performed. Two CMOS-compatible micromachining fabrication procedures have been developed for RF and inertial sensing MEMS applications. First, a process flow that uses Ge ashing technique to define nanogaps in SiGe electrostatic MEMS transceivers for wireless communication applications has been demonstrated. Second, a multilayer SiGe MEMS process flow has been implemented for the fabrication of a freely moving disk used to pave the way towards an integrated electrostatically levitated disk sensor system for low loss inertial sensing applications. The sensor system is comprised of a disk-shaped proof-mass that is 2 to be electrostatically suspended between sense and drive electrodes located above, below, and at the sides of the disk. The second " Post-CMOS " integration employs the state-of-art " back-end " materials already available in the integrated circuitry to fabricate the MEMS devices. Copper-based MEMS technology is used for the fabrication of low loss RF MEMS switches directly on top of the electronics. A model accounting for multilayer cantilever beam deflection suitable for MEMS devices fabricated with conventional " back-end " materials was derived. Experimental results characterizing stress gradients in copper-based RF MEMS switches will be presented. The effect of Physical Vapor Deposition (PVD), Atomic Layer Deposition (ALD) deposited TaN films, and compressive SiN films on beam deformation have been studied, as well as the effect of annealing on the reliability properties of the RF MEMS switches. To my mother " Thanks for everything you've poured into my life! " " I have learnt in life that success should not be defined by the position that someone holds; rather, it should be measured through all the obstacles that one has overcome while trying to succeed "
منابع مشابه
A MEMS Capacitive Microphone Modelling for Integrated Circuits
In this paper, a model for MEMS capacitive microphone is presented for integrated circuits. The microphone has a diaphragm thickness of 1 μm, 0.5 × 0.5 mm2 dimension, and an air gap of 1.0 μm. Using the analytical and simulation results, the important features of MEMS capacitive microphone such as pull-in voltage and sensitivity are obtained 3.8v and 6.916 mV/Pa, respectively while there is no...
متن کاملIntegration of Chemical Sensors with LSI Technology - History and Applications -
Chemical sensors are one of the oldest fields of research closely related to the semiconductor technology. From the IonSensitive Field-Effect Transistors (ISFET) in the 70’s, through MicroElectro-Mechanical-System (MEMS) sensors from the end of the 80’s, chemical sensors are combining in the 90’s MEMS technology with LSI intelligence to devise more selective, sensitive and autonomous devices to...
متن کاملIntegrated Micromechanical Circuits Fueled By Vibrating RF MEMS Technology
Having now produced devices with sufficient Q, thermal stability, aging stability, and manufacturability, vibrating RF MEMS technology is already finding its way into next generation timing and wireless applications. At this juncture, the technology is now poised to take its next logical steps: higher levels of circuit complexity and integration. In particular, as vibrating RF MEMS devices are ...
متن کاملA Bonded-Micro-Platform Technology for Modular Merging of RF MEMS and Transistor Circuits
A technology has been demonstrated that uses compression bonding to modularly combine platform-supported μmechanical filters with integrated BiCMOS transistor circuits while attempting to preserve the Q of mounted resonators. In this process, μmechanical devices are first fabricated onto SOI platforms, which are then released (together with devices) and compression bonded onto a transistor circ...
متن کاملMicroprocess Technology to Fabricate RF MEMS Switches, Variable Capacitors and Mechanical Resonators above Advanced LSI
This paper introduces our recent activities in R&D Center of Excellence for Integrated Microsystems toward new integrated MEMS. The most prominent difference of the new integrated MEMS from conventional ones is that MEMS is fabricated on advanced LSI with a very small design rule. Two examples of integrated MEMS technologies under development are described. The first one is singlecrystal-silico...
متن کامل